MBE Growth of CdTe and Hg sub 1-x Cd sub x Te Films and Multilayer Structures.

Abstract : The MBE growth of CdTe and Hg1-xCdxTe films on InSb and CdTe substrates has been investigated. Growth conditions for high-perfection CdTe films, exactly lattice-matched to InSb substrates, have been identified. These films are ideal for substrates for Hg1-xCdxTe film growth since they are free from low-angle grain boundaries and also provide electrical isolation of the Hg1-xCdxTe film from the InSb substrate. Magnetophotoconductivity studies of abrupt n-CdTe/p-InSb heterojunctions indicate the presence of an n-type inversion layer in the InSb. This could be the basis for a new type of FET device. Conditions for growth of Hg1-xCdxTe films have been explored and films of suitable quality for LWIR device fabrication have been prepared. Originator supplied keywords include: thin films; molecular; beams; epitaxy; growth; MBE; alloys; improvement; structure; cadmium telluride; control; mercury cadmium telluride; doping; extrinsic; multilayers; compounds III-V; and compounds II-IV.