Aluminum ribbon on a power device

In the semiconductor industry to increase the power density, improve the electrical performances and optimize the robustness in the application, more and more key roles are covered by back-end processes and in partcular by bonding technology used to connect power silicon chip and metallic leadframe that for Power devices is one of more impacting process. The performed studies, evaluations and production results show that currently the ribbon process can be considered the best compromize between multi-wires approach and clip bonding technology, normally used as interconnection methods to minimize the resistance contribution, improving the electrical performances, minimizing the global stress on the silicon well improving quality. The ribbon bonding allows to have connections resistance better than multi-wires bonding and values close to clip process, also obtaining a more robust process for power device packaging.