Uniformly Distributed Wideband Metal–Oxide–Semiconductor Field-Effect Transistor Model for Complementary Metal–Oxide–Semiconductor Radio-Frequency Integrated Cirsuits Applications

In this paper, a uniformly distributed wide-band metal–oxide–semiconductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter S11 due to the distributed gate-resistance of MOSFETs can be fitted well by this model. Good agreement between the measured and modeled results of scattering parameters S22, current gain H21, and unilateral gain U are also demonstrated. In addition, the impact of distributed gate-resistance on cut-off frequency ( fT) and maximum oscillation frequency ( fmax) performances of single gate-finger MOSFETs with large gate-width of 20, 40, 80, 120, and 160 µm are quantitatively characterized and analyzed.