A model for titanium silicide film growth

A physical model has been developed that describes the formation of titanium silicide from deposited titanium films on silicon substrates during furnace annealing. The model for TiSi/sub 2/ formation consists of set of diffusion-reaction equations and a set of equations for the mechanical behavior of the materials present. Some of the parameters for the model have been obtained from data in the literature. A one-dimensional computer implementation of the model has been developed that shows the time evolution of the growing layers and their constituents. This is useful for understanding the mechanisms that determine the relative thicknesses of various layers, like TiSi/sub 2/ and TiN, that grow at different temperatures during N/sub 2/ annealing. >