High-performance self-aligned p/sup +//n GaAs epitaxial JFET's incorporating AlGaAs etch-stop layer

The fabrication of high-transconductance epitaxial GaAs JFETs using a refractory metal self-aligned gate (SAG) process is discussed. By applying a highly doped, shallow epitaxial channel (n approximately=1*10/sup 18/ cm/sup -3/), a T-gate structure consisting of WSi or WN/p/sup +/ GaAs, and a thin undoped AlGaAs etch-stop layer (75 AA) separating the p/sup +/ GaAs and the active JFET n-channel, high-performance devices which show GaAs JFETs to be applicable to ultra-high-speed circuits have been realized. 1-, 0.85-, and 0.6- mu m gate length devices of 10- mu m gate width and threshold voltages near 0.3 V exhibited transconductances of 354, 406, and 440 mS/mm, respectively, at V/sub gs/=1 V and V/sub ds/ of 1.5 V. The 0.6*10- mu m device exhibited a peak transconductance of 554 mS/mm at V/sub gs/=1.3 V and a K value of 352 mu A/V/sup 2/- mu m. The peak transconductance occurs at a gate-to-source voltage below the bipolar regime of conduction of the FETs. >