Modelling and experimental studies of the metal (Pd, Sn)-CdTe structures with ohmic behavior

Abstract A theoretical model for the metal-CdTe structure with Ohmic behavior, including an interfacial layer between a metal and CdTe, an inversion layer in the CdTe space charge region and carrier tunneling through this region and the interfacial layer is proposed and experimentally confirmed. A relation between the structure's resistance and the interfacial layer energy band parameters (which are dependent on the phase composition of the interface) is obtained. The model is used to explain the features of variations in the Ohmic structure resistance.