The beam line architecture of the VIISta 810 medium current ion implanter

The VIISta 810 medium current ion implanter beam line has been designed to produce beam currents from 2 /spl mu/A to 5 mA with energies from 2 keV to 810 keV. The beam is 200 mm or 300 mm wide on wafer, uniform to better than 0.5% (1/spl sigma/ RMS) and parallel to better than 0.7/spl deg/. The system uses a novel beam line architecture to address the stringent limitations on particle, metal, energy and cross contamination for sub 180 nm line width device requirements. The beam line architecture and optics are presented and performance data reviewed.