A new PVD sputtering source for metal gate application

A new PVD source for metal gate applications has been systematically characterized. Results from the study indicate that the new source provides very low trap density ( 11 /cm 2 eV), excellent film thickness (and sheet resistance) non-uniformity (<1% 1sigma) and a wide range in deposition rates (from 0.4 Aring/s to 6 Aring/s), making it suitable for depositing metal films directly on gate oxides in 45nm and 32nm technology nodes