Absence of weak electron localization in epitaxial Fe wires on GaAs(110)

We measured the low-temperature magnetoresistance of epitaxial Fe wires on GaAs(110) for wires with widths ranging from 100 to 3000 nm. All wires exhibit a logarithmic resistance increase toward lower temperatures. The resistance increase is independent of the external magnetic field applied perpendicular to the film plane. This behavior shows that the logarithmic resistance increase is due to electron-electron interaction rather than weak localization effects. By decreasing the wire width we find that the temperature dependence of the resistance increases which is due to a $2d\text{\ensuremath{-}}1d$ transition of the electron-electron interaction.