Characterization of ion beam sputtered deposited W/Si multilayers by grazing incidence x-ray diffraction and x-ray reflectivity technique

W/Si multilayers four samples have been deposited on silicon substrate using ion beam sputtering system. Thickness of tungsten (W) varies from around 10 A to 40 A while the silicon (Si) thickness remains constant at around 30 A in multilayers [W-Si]x4. The samples have been characterized by grazing incidence X-ray diffraction (GIXRD) and X-ray reflectivity technique (XRR). GIXRD study shows the crystalline behaviour of W/Si multilayer by varying W thickness and it is found that above 20 A the W film transform from amorphous to crystalline phase and X-ray reflectivity data shows that the roughnesses of W increases on increasing the W thicknesses in W/Si multilayers.