Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation

We proposed a simple model to simulate topography and composition of deposited films. Our model described topography and composition of deposited fluorocarbon films in C5F8/CO/O2/Ar plasma etching. Analysis of compositions facilitated making of the reactor and surface models, and our model could treat the gas flow and open width dependency of the SiO2 etching. It was very useful in designing devices for easy manufacturing.