A Novel α-Si(C):H Color Sensor Array
1994
A novel α-Si(C):H color sensor array has been developed. In this device a single pixel consists of a combination of an amorphous silicon nipin detector and a crystalline operational amplifier. Steady state and transient opto electronic behavior of the nipin structure have been studied in order to optimize the design of the image sensor. Nipin structures are found to exhibit excellent dynamic range (125 dB) and linearity. The crystalline electronics causes only very little signal distortion which makes this sensor device a potential candidate for color image capture and processing for a wide range of illumination levels.
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