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0.25μm CoSi2 salicide CMOS technology thermally stable up to 1,000°C with high TDDB reliability.
0.25μm CoSi2 salicide CMOS technology thermally stable up to 1,000°C with high TDDB reliability.
1997
Tatsuya Ohguro
S Nakamura
Morifuji E
Takashi Yoshitomi
Toyota Morimoto
Harakawa H
Momose H S
Katsumata Y
Hiroshi Iwai
Keywords:
CMOS
Reliability (semiconductor)
Materials science
Optoelectronics
Time-dependent gate oxide breakdown
Salicide
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