Luminescence profiling: a diagnostic method for an impurities-defects system in semiconductor materials

In this paper a new method of impurities defect interaction monitoring by analyzing the low temperature many-bands photoluminescence spectra (PL) under the nonuniform external perturbation of the defect system is presented. As an example a PL spectra of cadmium telluride monocrystal plates after annealing in evacuated ampoule, cadmium and gallium atmosphere are discussed versus a coordinate of diffusion. The same well known background impurities such as Cu, Li, P and their complexes with native defects were studied under non- uniform deviation from stoichiometric composition of material toward the sample thickness.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.