ULSI-quality gate oxide on thin-film-silicon-on-insulator

Gate oxide quality for sub-0.5 /spl mu/m applications on Thin-Film-Silicon-On-Insulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, Q/sub BD/ and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk. However, increased surface micro-roughness on SOI materials leads to a higher thermal oxide defect density relative to that of bulk silicon. The use of wafer polish or stacked thermal/LPCVD oxide is found to be effective in achieving bulk-quality oxide defect densities on TFSOI while maintaining intrinsic I-V, Q/sub BD/ and charge trapping properties. >