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Fully Silicided (FUSI) Gate Technology as a Metal Gate Option for Advanced CMOS
Fully Silicided (FUSI) Gate Technology as a Metal Gate Option for Advanced CMOS
2006
E. P. Gusev
Cyril Cabral
Young-Hee Kim
Barry P. Linder
E. Cartier
Sufi Zafar
P. Jamison
Hasan M. Nayfeh
Sunfei Fang
Keywords:
Metal gate
CMOS
Electronic engineering
Materials science
Optoelectronics
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