Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures

Abstract The paper focuses on the study of charge trapping processes in high- k MOS structures at cryogenic temperatures. It was shown, that there is extremely strong trapping in shallow electron and hole traps, localized in the high- k dielectrics. Concentration of shallow electron traps is as much as 10 13  cm −2 , while abnormal small capture cross-sections (4.5–8 × 10 −24  cm 2 for different samples, accordingly) suggests localization of shallow emitting electron traps in transition layer “high- k dielectric/Si”, more, than at the interface. Shallow hole traps with concentration near 10 12  cm −2 are separated from silicon valence band with energy barrier in the range 10–39 meV for different samples.