Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p–n junction diode
2004
Abstract Electron irradiation was performed to enhance the switching speed and thereby to reduce the energy loss of a p–n junction diode. The reverse recovery time decreased significantly but other electrical deterioration such as leakage current and on-stage voltage drop due to the electron irradiation was found not to be much. Also the defect distribution and the type of the electron irradiation-induced defects are discussed based on the deep level transient spectroscopy (DLTS) analysis results and the secondary ion mass spectrometry (SIMS) depth profiles of the silicon substrate.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
12
References
4
Citations
NaN
KQI