Alternative EUVL resist processes for stochastic defect reduction

The occurrence of stochastic defects has been observed to especially affect resist process margins in the form of exposure latitude, critical dimension margin, etc. which may limit the flexibility of present patterning processes. Further enhancements in the resist processes are considered as a possible solution in the reduction of such stochastic defects. This work explores the application of alternative resist processes in the form of developers, rinse, etc. or a combination of such in the reduction of resist-related defects for EUV lithography. During the conference, detailed lithographic patterning results using these alternative developer and rinse solutions will be presented.