ATLAS handling problematic events in quasi real-time

Prior to cleaning spontaneous oxide films formed on the surface of an impurity diffusion layer or a lower layer wiring exposed at the bottom of a contact hole by sputtering by discharge plasmas with a rare gas, a dummy substrate formed with an insulation film is sputtered to deposit an insulation film on the inner wall of a plasma processing apparatus. Plasma ashing for the inner wall of the plasma processing apparatus may be used together. In this case, cleaning at higher accuracy is possible by monitoring the insulation resistance value at the inner wall of the plasma processing apparatus. Plasma processing is stabilized by always keeping the insulation resistance value high for the inner wall of the plasma processing chamber. Interconnection with low resistivity and high reliability can be attained by a fine contact hole of high aspect ratio.