Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy

Single‐crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low‐temperature (4.2 K) photoluminescence spectra exhibit free‐exciton and bound‐exciton peaks having linewidths on the order of 2 meV for both CdTe crystallographic orientations. However, defect‐related photoluminescence is found to be stronger in (100) oriented CdTe.