Advantages of BARC and photoresist matching for 193-nm photosensitive BARC applications
2010
As the semiconductor industry approaches smaller and smaller features, applications that previously used top antireflective
coatings have now begun using developer-soluble bottom anti-reflective coatings (BARCs). However, there
are several drawbacks to a wholly developer-soluble system, mainly because many of these systems exhibit isotropic
development, which makes through-pitch and topography performance unsatisfactory. To solve this problem, we have
developed several photosensitive BARC (PS BARC) systems that achieve anisotropic development. One issue with the
PS BARC, as with traditional dry BARCs, is resist compatibility. This effect is compounded with the photosensitive
nature of our materials. The acid diffusion and quenching nature of the resists has been shown to have a significant
effect on the performance of the acid-sensitive PS BARC. Some resists contain a highly diffusive acid that travels to the
PS BARC during the post-exposure bake and aids in clearance. Others show the opposite effect, and the same PS BARC
formulation is not able to clear completely. To address the lack of compatibility and to further improve the PS BARC,
we have developed a solution that properly matches PS BARC and photoresist performance.
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