Spin-Pump-Induced Spin Transport in p -Type Si at Room Temperature
2013
A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in $p$-type silicon ($p$-Si). Ferromagnetic resonance and effective $s\mathrm{\text{\ensuremath{-}}}d$ coupling in ${\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}$ results in spin accumulation at the ${\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}/p$-Si interface, inducing spin injection and the generation of spin current in the $p$-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the $p$-Si. This approach demonstrates the generation and transport of pure spin current in $p$-Si at room temperature.
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