Spin-Pump-Induced Spin Transport in p -Type Si at Room Temperature

2013 
A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in $p$-type silicon ($p$-Si). Ferromagnetic resonance and effective $s\mathrm{\text{\ensuremath{-}}}d$ coupling in ${\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}$ results in spin accumulation at the ${\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20}/p$-Si interface, inducing spin injection and the generation of spin current in the $p$-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the $p$-Si. This approach demonstrates the generation and transport of pure spin current in $p$-Si at room temperature.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    21
    References
    82
    Citations
    NaN
    KQI
    []