Magneto-transport investigation of Si-Doped n+ Al0.48In0.52As: Observation of the dx centre

Abstract Temperature dependent Hall measurements under hydrostatic pressure have been performed on Si-doped Al 0.48 In 0.52 As epitaxial layers. A DX-like state has been identified which provokes strong persistent photoconductivity (PPC) atlow temperatures. The energetic position E DX of this state and its critical temperature T c have been determined.