Study of growth parameters on the well-oriented In x Al 1-x N using sputtering on Si (100) substrate

In x Al 1–x N is beneficial for developing full-spectrum devices. The influence of growth parameters including reaction gas ratio, reaction pressure and growth temperature on In x Al 1-x N layers is investigated. We find the growth parameter of well-oriented film is 18sccm N 2 flow rate with 1:3 gas ration, 1Pa pressure and 200℃. The In 0.6 Al 0.4 N film device is fabricated with significant photo-respond and stable current. The saturation time is measured about 0.8~1.0s. Our work is meaningful for improving the photovoltaic properties of In x Al 1-x N devices in the future.