Method of manufacturing a copper alloy sputtering target and the target

The present invention, the wiring material of a semiconductor device, in particular optimum copper alloy target the seed layer formation, containing Sn 0.4~5wt%, without substantial precipitate is present in the target tissue relates copper alloy sputtering target, wherein the specific resistance of the target material is not less than 2.2Myuomegacm, wiring material of semiconductor devices, it is possible to form a stable homogeneous seed layer, especially during copper electroplating, and to provide a method for producing an excellent copper alloy sputtering target and the target to sputter deposition characteristics.