Preparation and Characterization of Semiconductor Thin Films

In the present work, the CdTe & ZnTe thin films of different thickness were prepared in the vacuum chamber using thermal evaporation using vacuum coating unit. The prepared films were cut into pieces and characterized for structural an d optical properties. The structural analysis of as prepared samples was carried out by the XRD (PHILIPS PW 3710). The structural analysis showed that increase with thickness, cryst allanity and grain size increases where as strain and dislocatio n density decreases. With increase in deposition time, the nu cleus size increases leading to larger clusters, their coalesc ence and formation of continuous films and hence also the grain size o f these films.