Temperature dependence of Hall mobility and electrical conductivity in SIMOX films

Transport data obtained on SIMOX films between 77 and 300 K are qualitatively different from those derived for bulk silicon. Results suggest a strong nonuniformity of carrier mobility: the uppermost part of the SIMOX layer is of comparable quality to bulk Si, but near the buried oxide there is a degradation, confirmed by prevailing coulombian scattering even at 300 K.