The effect of sputtering power and pressure on the morphology and electrical transport properties of topological insulator Bi2Se3 thin films prepared by magnetron sputtering

Epitaxial growth of thin films is an effective approach to minimize the contribution of bulk carriers for topological insulator (TI) Bi2Se3. Parameters used in preparation process are key factors for growing high quality thin films, especially for TI films. In this paper, magnetron sputtering was used for growing Bi2Se3 thin films on Si (100) substrates. Different working pressure and sputtering power were investigated. High-quality films could be obtained under relatively low pressure and low power. Linear and nonsaturated high-field linear magnetoresistance (LMR) was observed in high-quality films.