Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET

Trap charges influence the reliability of semiconductor devices, which is an essential measure of performance evaluation especially for high-performance circuits and safety-critical applications. In this paper for the first time, the individual and combined impact of Si-SiO 2 interface traps and Ferroelectric (FE) bulk traps on the performance of the Negative Capacitance (NC) FDSOI FET have been investigated. Our investigation shows: 1) The high interface electric field and variation of trap induced polarization causes early aging effect; 2) Performance degradation due to FE bulk traps that change the vertical field distribution through polarization variation in the FE oxide layer of NC-pFDSOI FET; 3) The combined effect of interface traps and the bulk traps predominantly degrades the performance of NC FDSOI FET as compared to the baseline pFDSOI FET. Our results using well-calibrated TCAD models reveal that the reliability barrier due to joint impact of interface traps and bulk traps, limits the low power performance of NCFET.