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Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
2016
Jacopo Franco
Ben Kaczer
Abhitosh Vais
Sonja Sioncke
Hiroaki Arimura
V. Putcha
AliReza Alian
Niamh Waldron
Daisy Zhou
Laura Nyns
Jerome Mitard
Liesbeth Witters
Marc Heyns
Guido Groeseneken
Nadine Collaert
Dimitri Linten
Keywords:
Optoelectronics
Temperature instability
Communication channel
Materials science
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