Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies

This paper discusses the “Building-In Reliability” (BIR) approach to process development, particularly for technologies integrating Bipolar, CMOS, and DMOS devices (so-called BCD technologies). Examples of BIR reliability assessments include gate oxide integrity (GOI) through Time-Dependent Dielectric Breakdown (TDDB) studies and degradation of laterally diffused MOS (LDMOS) devices by Hot-Carrier Injection (HCI) stress. TDDB allows calculation of gate oxide failure rates based on operating voltage waveforms and temperature. HCI causes increases in LDMOS resistance (Rdson), which decreases efficiency in power applications.