Синтез оптоэлектронной системы установки контроля микроэлектронных структур

Development of optoelectronic systems for registration of structuring element images demands improvement of the equipment for control of sizes and a form of microelectronic structures in accordance with design data and absence of introduced defects and impurities. For synthesis of these systems it is necessary to use a special method which allows to substantiate the use of a radiation source in it and  determine main functional parameters of the optoelectronic system. The paper presents the results of the method that has been used for development of the optoelectronic system operating  with the resolution of 250 nanometers. It has been shown that LED lamps can be used instead of traditionally used halogen and mercury-xenon lamps in the control equipment.