Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC

Wrinkle free few layer graphene was demonstrated by a graphitization of 4H-SiC substrates using a high power pulsed KrF laser. Wrinkles often observed after thermal graphitization were eliminated with a short heat cycle using a pulse laser anneal. Few layer graphene formed by the laser graphitization appears to have a non-Bernal stack, which leads to on-off ratio of ∼2 even at a few layer graphene. Drive current of 143 μA/μm was obtained at Vd = 100 mV and field effect mobility was 374 cm2/Vs.