Influence of post-annealing conditions on properties of ZnO:Ag films

Abstract Silver-doped ZnO films were grown on glass substrates by RF reactive magnetron sputtering. The as-grown ZnO:Ag film is insulating but behaves as p-type conduction with a resistivity of 152 Ω cm, a carrier concentration of 2.24×10 16  cm −3 and a Hall mobility of 1.83 cm 2 /V s after annealing in O 2 atmosphere at 600  ∘ C for 1 h. The influence of post-annealing temperature and ambience on the electrical, structural and optical properties of the films was investigated.