Combining dynamic and static depth profiling in low energy ion scattering

The advantages of combining dynamic and static depth profiling in low energy ion scattering are demonstrated for an Si/SiOx/W/Al2O3 ALD stack. Dynamic depth profiling can be used to calibrate static depth profiling. Energy losses of 152 and 215 eV/nm were found for 3 keV 4He+ and 5 keV 4He+ primary ions, respectively, for the experimental configuration used. This is in good agreement with the values used in the field. Static depth profiling can be used to recognize sputter artifacts in dynamic depth profiles.