Semiconductor thermal treatment device

PURPOSE: To automate thermal control for wafer and to improve uniformity of temperature, relating to a CVD device, diffusion device, etc., used for a semiconductor manufacturing process. CONSTITUTION: This processing system consists of a radiation thermometer 14 which measures an inner wall temperature distribution in a processing roam, a temperature analyzing means 24 and a control means which automatically changes setting of heater temperature. Or, in addition to them, a means which measures the temperature of a thin plate whose material is identical with a wafer is provided. As a result, temperature setting operation for the heater can be efficiently performed with a diffusion device, CVD device, etc. In addition, thickness of oxide film, polysilicon film, etc., and also sheet resistance can be more constant, so that the yield of LSI manufacture is raised. COPYRIGHT: (C)1993,JPO&Japio