Effects of Nitrogen Flow Rate on the Properties of Al-N Co-doped ZnO Films Grown by High Power Impulse Reactive Magnetron Sputtering

Al-N co-doped ZnO thin films were grown on glass substrate by high power reactive magnetron sputtering（HiPIMS）. We focus on the effects of nitrogen flow rate on the structure,morphology,and electrical properties of Al-N codoped ZnO thin films. The results show that the nitrogen flow rate plays an important role on the n-p type transformation and electrical properties of the conductivity type of Al-N co-doped ZnO thin films. When N2= 8 mL/min,the co-doped film is n-type. As the nitrogen fluxes was increasing,the carrier concentration was increased,and the film switched from ntype to p-type and then to n-type. In addition,the transmittance of Al-N co-doped ZnO film was as high as 85% in the visible light region. As 20 mL/min N2 was introduced,the Al-N co-doped ZnO film exhibits a good p-type conductivity with the resistivity of 4.51 Ω cm,a carrier concentration of 5.47×1017 cm-3 and a Hall Mobility of 2.7 cm2/Vs.