Laser-Induced Indium-Diffusion into Cadmium Sulfide Thin Film for Solar Cell Applications

Laser-induced diffusion is employed to dope indium (In) into sputtering-deposited cadmium sulfide (CdS) thin films. The increased optical band gap energy from 2.52 to 2.60 eV with maintenance of high optical transmittance about 60 nm in the 200-nm-thick films, the enhanced mobility over 42.5 cm2/Vs, and the decreased resistivity to 1.42 × 10−3 Ωcm are successfully obtained to be advantageous for a window layer in solar cells.