Frequency and recovery effects in high-κ BTI degradation

Net end-of-life aging prediction under realistic use conditions is the key objective for any product aging model. In this paper, a net degradation model is introduced and effects such as recovery, subsequent degradation, frequency, duty cycle, and recovery bias are evaluated. The high-κ recovery behavior observed is consistent with SiO 2 gate stacks, which allows the use of SiO 2 models to predict recovery in both NMOS and PMOS high-κ transistors.