p-CuO-n-ZnO solar cell and preparation method of p-CuO-n-ZnO solar cell

The invention discloses a p-CuO-n-ZnO solar cell. An indium-tin-oxide (ITO) substrate, a vertically oriented ZnO nanorod array, a CuO film and an Au electrode are superposed in sequence from the bottom layer to the top layer, wherein the vertically oriented ZnO nanorod array is used as an n-type semiconductor absorption layer, and the CuO film is used as a p-type semiconductor light absorption layer and a hole transporting layer. The preparation method of the p-CuO-n-ZnO solar cell comprises the following steps of: preparing a ZnO seed crystal layer on ITO by utilizing a sol-gel method; preparing the vertically oriented ZnO nanorod array by utilizing a chemical bath deposition method; preparing the CuO film on the ZnO nanorod array by utilizing an in-situ growth method; and sputtering the Au electrode by using an ion beam sputtering system. The invention has the advantages that the equipment adopted by the preparation method is simple, and the cost is low; as CuO is adopted to serve as the light absorption layer and the hole transporting layer, compared with organic materials, the CuO has higher electromigration capacity; and by combining with the electrical conduction characteristic of inorganic ZnO with high light absorption and low thermal emittance of the CuO, the photoelectric conversion efficiency of the solar cell can be effectively increased.