Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

Abstract Organometallic chemical vapor deposition of Ga 1− x Al x Sb ( x ⩽0.5) and for the first time Ga 1− x In x Sb ( x ⩽0.5) using trimethylgallium, trimethylantimony, trimethylaluminium and trimethylindium has been obtained on GaSb and GaAs substrates. The experimental set and the growth conditions are detailed. On GaSb substrates, surface morphologies of Ga 1− x Al x Sb epitaxial layer are satisfactory but Ga 1− x Al x Sb layers exhibit a degradation of their X-ray diffraction spectra with increasing lattice mismatc Solid compositions as functions of vapor phase compositions and growth temperatures are discussed on the basis of simple kinetic considerations.