Characterization of two opto-electronic structures for high-frequency applications

Two opto-electronics integrated circuits (OEIC) are presented. CMOS transimpedance amplifier (TIA) structures based on the common-gate topology, using negative feedback with the integration of a silicon photodiode, are discussed. The most important characteristics are showed. Where the bandwidth, noise level, and linearity are considered. Simulations were performed using BSIM3v3, modified BSIM3v3, and EKV models for high-frequency applications. Experimental and simulation results were performed for a 0.8 /spl mu/m BiCMOS AMS process, using HSPICE simulator. Experimental results, obtained from S-parameters, show a transimpedance gain of 40 dB and a bandwidth of 2 GHz.