Measurement-Based Compact Thermal Model Extraction Methodology for Packaged ICs

In this paper, a rigorous methodology for extracting the thermal compact model parameters of packaged chips is presented. The methodology is based on using a custom-designed test chip with multiple heating and temperature sensing elements in order to predict the temperature distribution in packaged chips after packaging. The technique involves measurement of various chips with different thicknesses, different packages, and for different power dissipation scenarios through which the thermal model parameters can be extracted. The results show that ultrathin chips with a total thickness below $20~\mu \text{m}$ experience a dramatically increased temperature for localized heat dissipation. In addition to this, the measurements conducted in time domain and frequency domain show that at high enough frequencies of heat pulsing, the temperature variations become independent of the thermal boundary conditions of the chip. The measurement results are compared to the finite-element method simulation data. The simulations together with the measurement methodology serve as a technique to extract the thermal compact model parameters of packaged chips after being fabricated and packaged in an accurate and efficient way.