Intrinsic correlation between mobility reduction and V t shift due to interface dipole modulation in HfSiON/SiO 2 stack by La or Al addition

Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (DeltaV t ), both of which are induced by interface dipole modulation at high-k/SiO 2 interface, is investigated. Three types of dipole modulation are examined; Al addition, La addition, and changing quality of interfacial SiO 2 layer. Extrinsic scattering components due to increases of interface state and surface roughness are extracted and separated. It is found that RCS due to interface dipole modulation by Al addition increases with increasing DeltaV t , while that by La addition is constant, independent of DeltaV t . Inevitability of additional scattering for DeltaV t is discussed based on two different models for dipole formation mechanisms.