Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy

Abstract Si 2p and N 1s spectra arising from a oxynitride film formed on Si(1 0 0) surface were measured in the photon energy range from 556 to 1471 eV, where the electron escape depth in SiO 2 changes from 1.68 to 3.80 nm. It was found for the first time that the photon energy dependence of N 1s and Si 2p photoelectron spectra can be nearly reproduced if the depth profile of nitrogen atoms is known.