Evaluation of Electrodeposited Cadmium Telluride Solar Cells

1981 
Schottky barrier solar cells formed on electrochemically deposited n-CdTe films are evaluated. The important electrodeposition process variables, i.e. tellurium concentration in the electrolyte and the deposition rest potential (Erest), are optimized for best solar cell operation. The solar cell parameters for the devices made on as-deposited films are: Jsc = 6mA/cm2, VOC = 0.57V and F.F. =. 6 under 100 mW/cm2 illumination. Minority carrier diffusion length in these films is determined to be 0.05 – 0.1 μm. A brief heat treatment in air of the CdTe films improved the solar cell parameters greatly. Cells with efficiencies in the order of 6% are obtained on such films. A larger diffusion length is shown to be the reason for this improvement.
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