Low-Power Z2-FET Capacitorless 1T-DRAM

This work highlights the features of Z2-FET capacitorless 1T-DRAM describing its operation in detail. The Z2-FET memory cell fabricated with FDSOI technology delivers large current sense margin along with long retention time at room temperature. Numerous measurements confirm that the demonstrated 1T-DRAM is able to achieve attractive current margin even with 0.5 V programming voltage. For this case, the power consumption is also reduced by restricting the writing current. Abovementioned merits along with significantly small OFF-state current makes this device a suitable candidate for low power embedded DRAM applications.