Minority carrier lifetime and photoluminescent response of heavily carbon‐doped GaAs grown with gas source molecular‐beam epitaxy using halomethane doping sources

CCl4, CHCl3, and trimethylgallium have been utilized as carbon doping sources for GaAs epilayers sandwiched in isotype GaAs/Al0.33Ga0.67As heterostructures and for p‐GaAs active layers in Ga0.51In0.49P/GaAs/Al0.30Ga0.70As double‐heterostructure light emitting diodes (LEDs) grown by gas source molecular‐beam epitaxy (MBE). Minority carrier lifetimes and photoluminescence (PL) intensities have been evaluated from time‐resolved PL spectroscopy of the isotype heterostructures with GaAs active layers ranging in thickness from 0.2–1.0 μm and carbon doping from 1018 to 1020 cm−3. These results are compared to those measured in Be‐doped films grown in the same MBE system and to results on Be‐doped films published by others. Measurements of LED responsivity and optical modulation bandwidth are discussed for carbon doping over the same 1018–1020 cm−3 range. Although electrical 3 dB bandwidths increase with C doping and exceed 1.5 GHz at 1020 cm−3 C doping, both LED brightness and epilayer PL intensities are present...