Apparatus for forming thin film

The present invention, the film-growing chamber inside which the gas is injected into the thin film for forming the value of the present invention relates to a thin-film forming apparatus; Transfer part for transferring the substrates to the inside of the chamber; It is disposed upstream of the substrate being conveyed to the inside of the chamber, at least one sputtering source in the opposite direction of the substrate with the magnet array; By rotating the source body to increase the use efficiency of the ion source rotating cylindrical sputtering source structure; A cooling member for cooling the high temperature by the plasma that is generated when a high voltage is applied to the source body; and a thin film formation apparatus for a high-density plasma generated according to the high voltage is applied, including a possible increase the deposition rate becomes, is conveyed to the inside of the chamber a heater disposed downstream of the substrate; Located in the lower portion of the substrate is conveyed to the inside of the chamber, the magnetic to the substrate on which the plasma particles in the thin film formed so as to be guided and extended to the substrate of high-density, and when further forming a thin film including, a low-density region to evenly substrate induction and the expansion increases the compactness of the thin tissue, it is possible to form the grain size (grain size) of the thin film larger, if as a result of decreases the surface resistance of the thin-film electron mobility of the thin film CIGS thin film to be improved to form the light the CIGS thin film with a conversion efficiency can be improved is provided.